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2SK3736
Silicon N Channel MOS FET Power Switching
REJ03G0525-0200 Rev.2.00 Jul 27, 2006
Features
* Capable of 2.5 V gate drive * Low drive current * Low on-resistance
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 250 10 6 24 6 30 150 -55 to +150 Unit V V A A A W C C
Rev.2.00 Jul 27, 2006 page 1 of 6
2SK3736
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 250 10 -- -- 0.5 -- -- 5.5 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.55 0.57 9.2 450 100 60 17 0.8 9.5 14 48 88 25 0.94 125 Max -- -- 10 5 1.5 0.7 0.8 -- -- -- -- -- -- -- -- -- -- -- 1.45 -- Unit V V A A V S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 8 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 4 V Note3 ID = 3 A, VGS = 2.5V Note3 ID = 3 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 200 V, VGS = 4 V, ID = 6 A VGS = 4 V, ID= 3 A, RL = 10 , Rg = 10
IF = 6 A, VGS = 0 Note3 IF = 6 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Jul 27, 2006 page 2 of 6
2SK3736
Main Characteristics
Power vs. Temperature Derating
60 100 30 10 3 1 0.3 0.1 0.03 Operation in this
area is limited
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
DC
40
10 s 100 s 1 ms PW = 10 ms (1 shot)
O n tio ra pe (T C =
20
) C 25
0.01 by RDS (on) 0.003 Ta = 25C 0.001 0.1 0.3 1
0
50
100
150
3
10
30 100 300 1000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 15 Pulse Test
Typical Transfer Characteristics
VDS = 10 V Pulse Test -25C 25C 10 TC = 75C
10 V 5 V 2.8 V 12
2.6 V
2.4 V 8 2.2 V 2.0 V 4 1.8 V VGS = 0 V 0 4 8 12 16 20
Drain Current ID (A)
Drain Current ID (A)
16
5 TC = 75C 25C -25C 0 1 2 3 4 5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
5 Pulse Test 4
Static Drain to Source on State Resistance RDS (on) ()
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
10 5 Pulse Test
6A
3
2 1.0 0.5 VGS = 2.5 V 4V 0.2 0.1 0.1 0.2
2 3A 1 ID = 1.5 A
0
2
4
6
8
10
0.5 1
2
5
10 20
50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Jul 27, 2006 page 3 of 6
2SK3736
Static Drain to Source on State Resistance vs. Temperature (1)
2.0 Pulse Test VGS = 4 V
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance RDS (on) ()
Static Drain to Source on State Resistance vs. Temperature (2)
2.0 Pulse Test VGS = 2.5 V
1.5 6A 1.0
1.5 6A 1.0 ID = 3 A
0.5
ID = 3 A
0.5
0 -25
0
25
50
75
100 125 150
0 -25
0
25
50
75
100 125 150
Case Temperature TC (C) Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S) Reverse Recovery Time trr (ns)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 75C 25C TC = -25C 1,000 500
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test
200 100 50
20 10 0.1 0.2 0.5 1
2
5
10 20
50 100
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
1,0000 400
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
ID = 6 A 12
1,000 Ciss
300
100
Coss Crss VGS = 0 f = 1 MHz
200
VDS VDD = 200 V 100 V VDD = 50 V 100 V 200 V VGS
8
10
100
50 V
4
1 0
10
20
30
0
4
8
12
16
0 20
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Rev.2.00 Jul 27, 2006 page 4 of 6
Gate to Source Voltage VGS (V)
16
Capacitance C (pF)
2SK3736
Reverse Drain Current vs. Source to Drain Voltage
25
Switching Characteristics
10000
*
Switching Time t (ns)
3000 1000 300 100
Reverse Drain Current IDR (A)
VGS = 4 V, VDD = 30 V Rg = 10 , PW = 2 s, duty < 1% tr
*
Pulse Test
20
15
VGS = 4 V, 8 V
0V -4 V
tf td (off)
10
30 10 0.1
5
td (on) 0.3 1.0 3 10 30 100
0
0.4
0.8
1.2
1.6
2.0
Drain Current ID (A)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3
0.2
0.1
1.0
TC = 25C
0.1
0.05
0.02
0.03
0.01 10
0.01 t Pu ho 1S
lse
ch-c(t) = S (t) * ch-c ch-c = 4.17C/W, TC = 25C PDM D = PW T PW T 1m 10 m 100 m 1 10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 30 V td (on) Vin Vout 10 % Vout Monitor
Waveforms
90 %
10 % 90 % tr 90 % td (off)
10 %
tf
Rev.2.00 Jul 27, 2006 page 5 of 6
2SK3736
Package Dimensions
Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK3736 Quantity 50 pcs. Sack Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Jul 27, 2006 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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